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1N5279 SMBJ11A 15KP2 2001500 TBC2335 0179A MNP0008 74HC5
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  Datasheet File OCR Text:
  shantou huashan electronic devices co.,ltd . applications general purpose amplifier. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max uni t test conditions bv ceo collector-emitter breakdown voltage 80 v i c =1ma, i b =0 bv ebo emitter-base breakdown voltage 4 v i e =100 a i c =0 h fe 1 dc current gain 50 v ce =1v, i c =10ma h fe 2 dc current gain 50 v ce =1v, i c =100ma v ce(sat) collector- emitter saturation voltage 0.25 v i c =100ma, i b =10ma v be on base-emitter on voltage 1.2 v v ce =1v, i c =100ma i cbo collector cut-off current 100 na v cb =80v, i e =0 i ceo collector cut-off current 100 na v ce =60v, i b =0 f t current gain-bandwidth product 100 mhz v ce =20v,i c =10ma, f=100 mhz t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation 625mw v cbo collector-base voltage 80v v ceo collector-emitter voltage 80v v ebo emitter-base voltage 4v i c collector current 500ma 1 D emitter e 2 D base b 3 D collector c to-92 HA06 npn s i l i c o n t r a n s i s t o r


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